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BCR08AM-12A
Triac
Low Power Use
REJ03G0343-0200 Rev.2.00 Nov 30, 2007
Features
* * * * IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3 13 1 2
Applications
Electric fan, air cleaner, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
REJ03G0343-0200 Page 1 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 0.8 8 0.26 1 0.1 6 0.5 - 40 to +125 - 40 to +125 0.23 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave 360 conduction, Tc = 56C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Symbol IDRM VTM VRGT VRGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 5 5 -- 60 -- Unit mA V V V mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 1.2 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 0.4 A/ms 3. Peak off-state voltage VD = 400 V
Main Current Main Voltage (dv/dt)c
REJ03G0343-0200 Page 2 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Performance Curves
Maximum On-State Characteristics
101 7 5 10
Rated Surge On-State Current
Tj = 25C
Surge On-State Current (A)
9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102
On-State Current (A)
3 2 100 7 5 3 2 10-1 1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics ( II and III)
Gate Trigger Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101 0 20 40 60 80 100 120 140
VGM = 6V VGT
Typical Example
PGM = 1W PG(AV) = 0.1W IGM = 0.5A
Gate Voltage (V)
IRGT I, IRGT III
VGD = 0.1V
3 5 7 101 2 3 5 7 10 2 2 3 5 7 103
-60 -40 -20
Gate Current (mA)
Junction Temperature (C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient)
Transient Thermal Impedance (C/W)
2 3 4 5 310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101
-60 -40 -20
Typical Example
2
Junction to ambient
102 7 5 3 2 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction to case
0 20 40 60 80 100 120 140
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
REJ03G0343-0200 Page 3 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Allowable Case Temperature vs. RMS On-State Current
160
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.8 1.6
360 Conduction 1.4 Resistive, 1.2 inductive loads
1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Case Temperature (C)
140 120 100 80 60 40
Curves apply regardless of conduction angle
360 Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Allowable Ambient Temperature vs. RMS On-State Current
Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads
Repetitive Peak Off-State Current vs. Junction Temperature
105
7 5 3 2 7 5 3 2 7 5 3 2
-60 -40 -20
Typical Example
Ambient Temperature (C)
140 120 100 80 60 40
104
103
360 Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
102
0
20 40 60 80 100 120 140
RMS On-State Current (A)
Junction Temperature (C)
Holding Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
103
7 5 3 2
Latching Current vs. Junction Temperature
102
7 5 3 2
Typical Example
Distribution T2+, G- Typical Example
Latching Current (mA)
102
7 5 3 2
101 7 5 3 2 100 7 5 3 2 10-1
T2-, G- Typical Example
0 40 80 120 160
101
-60 -40 -20
0
20 40 60 80 100 120 140
-40
Junction Temperature (C)
Junction Temperature (C)
REJ03G0343-0200 Page 4 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120
Typical Example
140 120 100 80 60 40 20 0
-60 -40 -20
Typical Example Tj = 125C I Quadrant
100 80 60 40
III Quadrant
20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
0
20 40 60 80 100 120 140
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
101 7 5 3 2 100 7 5 3 2
10-1 10-1
Minimum Characteristics Value
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103 7 5 3 2 102 7 5 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
Typical Example Tj = 125C IT = 1A = 500s VD = 200V
Typical Example IRGT I IRGT III
III Quadrant
I Quadrant
2
3
5 7 100
2
3
5 7 101
Rate of Decay of On-State Commutating Current (A/ms)
Gate Current Pulse Width (s)
Gate Trigger Characteristics Test Circuits
6 6
6V V
A 330
6V V
A 330
Test Procedure II
Test Procedure III
REJ03G0343-0200 Page 5 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Package Dimensions
Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code MASS[Typ.] 0.23g
Unit: mm
5.0Max 4.4
1.25 1.25 Circumscribed circle 0.7
1.1
11.5Min
5.0Max
Order Code
Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name - Lead forming code Type name - TB Standard order code example BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB
Note : Please confirm the specification about the shipping in detail.
REJ03G0343-0200 Page 6 of 6
Rev.2.00
Nov 30, 2007
3.6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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